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Mar 14, 2024
(Nanowerk Information) A analysis staff from Metropolis College of Hong Kong (CityU) lately efficiently achieved lattice-mismatch-free development of III-V/chalcogenide core-shell heterostructure nanowires for digital and optoelectronic purposes. This breakthrough addresses essential technological challenges associated to the lattice mismatch drawback within the progress of high-quality heterostructure semiconductors, resulting in enhanced service transport and photoelectric properties.
The examine was revealed in Nature Communications (“Lattice-mismatch-free development of III-V/chalcogenide core-shell heterostructure nanowires”).
Building schematics of GaSb/GeS core–shell heterostructure nanowires. （Supply: Liu, F., Zhuang, X., Wang, M. et al. https://doi.org/10.1038/s41467-023-43323-x)
For many years, the problem of manufacturing high-quality heterostructure semiconductors has persevered, hindered primarily by the lattice mismatch concern on the interface. This limitation has constrained the potential of those supplies for high-performance digital and optoelectronic purposes. In a breakthrough effort to beat this impediment, the analysis staff initially launched a pioneering methodology for the lattice-mismatch-free synthesis of III-V/chalcogenide core-shell heterostructure nanowires designed for machine purposes.
“On the nanoscale stage, floor traits play a pivotal position in governing the fabric properties of low-dimensional supplies. The surfactant properties of chalcogenide atoms contribute considerably to the promise of core-shell heterojunction electronics for addressing evolving technological wants,” stated Professor Johnny Ho, Affiliate Vice-President (Enterprise) and Professor of the Division of Supplies Science and Engineering at CityU, who led the analysis.
Giant-area infrared imaging arrays fabricated on InGaAs/GeS core-shell nanowire photodetectors. （Supply: Liu, F., Zhuang, X., Wang, M. et al. https://doi.org/10.1038/s41467-023-43323-x）
“The advances achieved on this examine mark a considerable stride in the direction of the environment friendly utilization of III-V heterostructure semiconductors, paving the best way for high-performance purposes, notably within the realm of the Web of Issues (IoT), which can be in any other case unattainable utilizing different approaches,” added Professor Ho.
Aligned with the third-generation detector SWaP3 idea (Measurement, Weight, Energy, Value, Efficiency), the most recent technology of optoelectronic units is trending in the direction of miniaturization, flexibility and intelligence, Professor Ho emphasised. “The lattice-mismatch-free development of core-shell heterostructure nanowires holds nice promise for next-generation ultrasensitive SWaP3 optoelectronics,” he stated.
Lattice-mismatch-free development of core–shell heterostructure nanowires, taking GaSb/GeS for instance.（Supply: Liu, F., Zhuang, X., Wang, M. et al. https://doi.org/10.1038/s41467-023-43323-x）
This pioneering analysis encompasses revolutionary materials design, novel course of growth, and the exploration of recent optoelectronic purposes. The preliminary focus includes the investigation of an amorphous shell composed of chalcogenide covalent-bond networks, strategically employed to deal with the lattice mismatch concern surrounding the III–V core. The profitable achievement of efficient lattice-mismatch-free development within the core-shell heterostructure introduces unconventional optoelectronic properties. Notably, these properties embrace bi-directional photoresponse, seen light-assisted infrared photodetection, and enhanced infrared photodetection.
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