Infineon hones SiC MOSFET trench expertise


Infineon’s 650-V and 1200-V CoolSiC G2 MOSFETs enhance saved vitality and prices by as much as 20% in comparison with the earlier technology. This second technology of CoolSiC trench MOSFETs continues to harness the efficiency attributes of silicon carbide, facilitating diminished vitality loss and better effectivity throughout energy conversion.

CoolSiC G2 consists of enhancements in key figures-of-merit for each hard-switching operation and soft-switching topologies. The quick switching functionality of those units is elevated by greater than 30%, and thermal functionality is now 12% higher than the earlier units.

The massive portfolio of CoolSiC G2 MOSFETs is appropriate for all widespread combos of AC/DC, DC/DC, and DC/AC phases. These low on-resistance SiC MOSFETs can be utilized in photovoltaic inverters, vitality storage methods, EV charging, energy provides, and motor drives.

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Datasheets and buy data for CoolSic G2 MOSFETs could be accessed through the product web page hyperlink under.

CoolSic G2 product web page

Infineon Applied sciences 

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